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Fujitsu Develops Breakthrough Technology for

2004-12-21  Fujitsu Laboratories Ltd. today announced the development of a technology that enables low-cost production of gallium-nitride (GaN)(*1) high electron mobility transistors (HEMT)(*2), a key technology in mobile base

Panasonic Develops the World's First GaN

2006-6-28  Panasonic develops gallium nitride (GaN) power transistor on silicon with blocking-voltage-boosting structure. Dec 08, 2010. Study Shows Big

Fujitsu Develops World's First GaN HEMT Able

2008-10-10  Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a

Thin film Gallium nitride (GaN) based acoustofluidic

Gallium nitride (GaN) is a compound semiconductor which shows advantages in new functionalities and applications due to its piezoelectric, optoelectronic, and piezo-resistive properties. This study develops a thin film GaN-based acoustic tweezer (GaNAT) using surface acoustic waves (SAWs) and demons

Gaussian Process Regression for Small-Signal Modelling of

2021-1-12  This paper explores and develops a biasdependent small-signal model for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) using a non-parametric probability based Gaussian Process Regression (GPR) approach. The characterization data for HEMT is available in S-parameters. It is observed that the determination of optimal hyper-parameters

Growth of bulk GaN crystals: Journal of Applied Physics

2020-8-5  Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented. Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux,

POWDEC K.K.|News|

POWDEC develops a breakthrough Gallium Nitride transistor. "Ultra low losses, high breakdown voltage, no current collapse" 2011 Mar 21 POWDEC and The University of Sheffield have co-developed a high breakdown-voltage super Hetero-junction Field Effect Transistor (HFET) based on polarization junctions. 2011 Mar 18

Panasonic Develops the World's First GaN

2006-6-28  Panasonic develops gallium nitride (GaN) power transistor on silicon with blocking-voltage-boosting structure. Dec 08, 2010. Study Shows Big Game Hunters, Not Climate Change, Killed Off Sloths.

Fujitsu Develops World's First GaN HEMT Able

2008-10-10  Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for

ROHM’s develops 150V GaN HEMT with 8V gate

2021-6-1  News: Microelectronics 1 June 2021. ROHM’s develops 150V GaN HEMT with 8V gate breakdown voltage. Power semiconductor maker ROHM says that it has developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices optimized for power

Electric develops GaN PA module for 5G base

News: Microelectronics 14 July 2020. Electric develops GaN PA module for 5G base-stations. Tokyo-based Electric Corp has developed new technology to realize a gallium nitride (GaN) power amplifier (PA) module for 5G base-stations that offers a combination of a compact footprint (6mm by 10mm) and extra-high-power efficiency exceeding 43% (at the 5G

Power Electronics Fraunhofer ISIT

The business unit Power Electronics at Fraunhofer ISIT develops and manufactures innovative active and passive power semiconductor components based on silicon and gallium nitride, develops power electronic systems and integrates them with high-performance accumulators for special applications towards high-power storage systems.

Optimal Design of Planar Magnetic Components for a Two

2018-6-22  This paper develops a 200-W wide-input-range (64-160-to-24-V) rail grade dc-dc converter based on gallium nitride devices. A two-stage configuration is proposed. The first regulated stage is a two-phase interleaved buck converter (>400 kHz), and the second unregulated stage is an LLC (2-MHz) dc transformer. In order to achieve high frequency and

Navitas Semiconductor Goes Public With $1.7B Valuation

2021-10-25  Navitas develops gallium nitride semiconductors that are used in chargers for various products, such as smartphones and laptops,

Navitas Semiconductor Company Profile: Stock

Navitas Semiconductor Corp develops ultra-efficient gallium nitride (GaN) semiconductors that are revolutionizing power electronics. GaN power ICs integrate GaN power with drive, control, and protection to enable fast charging, high power density, and energy savings for mobile, consumer, enterprise, eMobility, and new energy markets.

POWDEC K.K.|News|

POWDEC develops a breakthrough Gallium Nitride transistor. "Ultra low losses, high breakdown voltage, no current collapse" 2011 Mar 21 POWDEC and The University of Sheffield have co-developed a high breakdown-voltage super Hetero-junction Field Effect Transistor (HFET) based on polarization junctions. 2011 Mar 18

IISc Develops India’s first e-mode Gallium

2019-5-9  All the electronic devices that we use today have components made of semiconductors, mostly silicon. In recent years, gallium nitride, another semiconductor, is making its way into electronics. It is better suited for high

Startup develops GaN semiconductors at ProNano RISE

2022-1-14  Startup develops energy-smart GaN semiconductors at the testbed ProNano. and temperatures than silicon. Semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) have about three times the bandgap compared to silicon. This provides higher energy efficiency and lower energy losses in, for example, the form of waste heat

Fraunhofer ISE Develops Highly Compact, High

2016-11-21  Gallium nitride a material with perspective. For years, Fraunhofer ISE has been undertaking R&D on high-efficiency, high-frequency power electronics for renewable energy systems and applications using the newest

ROHM’s develops 150V GaN HEMT with 8V gate

2021-6-1  News: Microelectronics 1 June 2021. ROHM’s develops 150V GaN HEMT with 8V gate breakdown voltage. Power semiconductor maker ROHM says that it has developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices optimized for power

Growth of bulk GaN crystals: Journal of Applied Physics

2020-8-5  Perspectives about growth of bulk gallium nitride crystals, fabricating high structural quality gallium nitride wafers and the market demand for them are presented. Three basic crystal growth technologies, halide vapor phase epitaxy, sodium flux,

Navitas Semiconductor Goes Public With $1.7B Valuation

2021-10-25  Navitas develops gallium nitride semiconductors that are used in chargers for various products, such as smartphones and laptops,

Iii V Semiconductors,compound

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide material, and provide epi wafer service. PAM-XIAMEN has established the manufacturing technology for Gallium Nitride material along with epitaxial wafers. Commercial CdZnTe material are on mass production, which is a new semiconductor, which enables to

Innovative displays Aledia

Innovative displays Aledia. Aledia develops and manufactures an LED (light-emitting diode) display technology based on a unique 3D architecture using gallium-nitride (GaN-on-silicon) nanowires (WireLED TM). Discover the LED Tech.

Navitas Semiconductor Company Profile: Stock

Navitas Semiconductor Corp develops ultra-efficient gallium nitride (GaN) semiconductors that are revolutionizing power electronics. GaN power ICs integrate GaN power with drive, control, and protection to enable fast charging, high power density, and energy savings for mobile, consumer, enterprise, eMobility, and new energy markets.

POWDEC K.K.|News|

POWDEC develops a breakthrough Gallium Nitride transistor. "Ultra low losses, high breakdown voltage, no current collapse" 2011 Mar 21 POWDEC and The University of Sheffield have co-developed a high breakdown-voltage super Hetero-junction Field Effect Transistor (HFET) based on polarization junctions. 2011 Mar 18